Invention Grant
- Patent Title: Semiconductor storage device
- Patent Title (中): 半导体存储设备
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Application No.: US13191678Application Date: 2011-07-27
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Publication No.: US08498144B2Publication Date: 2013-07-30
- Inventor: Masahiro Takahashi , Katsuyuki Fujita , Yoshihiro Ueda , Katsuhiko Hoya
- Applicant: Masahiro Takahashi , Katsuyuki Fujita , Yoshihiro Ueda , Katsuhiko Hoya
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-203345 20100910
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/15

Abstract:
A semiconductor storage device includes first to fourth switch circuit. The semiconductor storage device includes a row decoder which controls a voltage of a word line. The semiconductor storage device includes a first selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a first resistance change element which is connected in series to the first selection transistor between the first bit line and the second bit line, and of which a resistance value changes according to a flowing current. The semiconductor storage device includes a second selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a second resistance change element which is connected in series to the second selection transistor between the second bit line and the third bit line, and of which a resistance value changes according to a flowing current.
Public/Granted literature
- US20120063215A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2012-03-15
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