Invention Grant
- Patent Title: Heat treatment apparatus and method for heating substrate by light irradiation
- Patent Title (中): 热处理装置及通过光照射加热基板的方法
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Application No.: US13293641Application Date: 2011-11-10
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Publication No.: US08498525B2Publication Date: 2013-07-30
- Inventor: Hiroki Kiyama , Kenichi Yokouchi
- Applicant: Hiroki Kiyama , Kenichi Yokouchi
- Applicant Address: JP
- Assignee: Dainippon Screen Mfg. Co., Ltd.
- Current Assignee: Dainippon Screen Mfg. Co., Ltd.
- Current Assignee Address: JP
- Agency: Ostrolenk Faber LLP
- Priority: JPJP2008-106894 20080416
- Main IPC: F24C7/00
- IPC: F24C7/00

Abstract:
In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more.
Public/Granted literature
- US20120114316A1 HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY LIGHT IRRADIATION Public/Granted day:2012-05-10
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