A method for writing and reading data in memory cells, comprises the steps of: defining a virtual memory, defining write commands and read commands of data (DT) in the virtual memory, providing a first nonvolatile physical memory zone (A1), providing a second nonvolatile physical memory zone (A2), and, in response to a write command of an initial data, searching for a first erased location in the first memory zone, writing the initial data (DT1a) in the first location (PB1(DPP0)), and writing, in the metadata (DSC0) an information (DS(PB1)) allowing the first location to be found and an information (LPA, DS(PB1)) forming a link between the first location and the location of the data in the virtual memory.