Invention Grant
- Patent Title: Tearing-proof method for writing data in a nonvolatile memory
- Patent Title (中): 在非易失性存储器中写入数据的防撕裂方法
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Application No.: US12887313Application Date: 2010-09-21
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Publication No.: US08499192B2Publication Date: 2013-07-30
- Inventor: Hubert Rousseau
- Applicant: Hubert Rousseau
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Seed IP Law Group PLLC
- Priority: FR0904498 20090921; FR0904499 20090921; FR0904500 20090921; FR0904501 20090921
- Main IPC: G06F11/00
- IPC: G06F11/00

Abstract:
A method for writing and reading data in memory cells, comprising, when writing a data in a block of a first memory zone, a step consisting of writing in a second memory zone a temporary information structure metadata comprising a start flag, an identifier of the temporary information structure, an information about the location of the block in the first memory zone, and a final flag, and, after a power on of the first memory zone, searching for an anomaly in temporary information structures present in the second memory zone.
Public/Granted literature
- US20110072300A1 TEARING-PROOF METHOD FOR WRITING DATA IN A NONVOLATILE MEMORY Public/Granted day:2011-03-24
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