Invention Grant
- Patent Title: Methods of making thin film capacitors
- Patent Title (中): 制造薄膜电容器的方法
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Application No.: US12168352Application Date: 2008-07-07
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Publication No.: US08499426B2Publication Date: 2013-08-06
- Inventor: Cengiz A. Palanduz
- Applicant: Cengiz A. Palanduz
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01G7/00
- IPC: H01G7/00

Abstract:
An apparatus including a first electrode; a second electrode; a first and second ceramic material disposed between the first electrode and the second electrode, the second ceramic material having a greater electrical conductivity than the first ceramic material. A method including forming a first ceramic material film and a different second ceramic material film on a first electrode; and forming a second electrode on the second ceramic material film to form a capacitor structure having the first ceramic material film and the second ceramic material film disposed between the first electrode and the second electrode, wherein the first ceramic material has a conductivity selected to dampen undesired oscillations in electrical device operation to which the capacitor structure may be exposed. An apparatus including a first electrode; a second electrode; and a composite dielectric including a plurality of dielectric films including a different Curie temperature.
Public/Granted literature
- US20080263842A1 THIN FILM CAPACITORS AND METHODS OF MAKING THE SAME Public/Granted day:2008-10-30
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