Invention Grant
US08501139B2 Floating Si and/or Ge foils 有权
浮动Si和/或Ge箔

  • Patent Title: Floating Si and/or Ge foils
  • Patent Title (中): 浮动Si和/或Ge箔
  • Application No.: US12713166
    Application Date: 2010-02-25
  • Publication No.: US08501139B2
    Publication Date: 2013-08-06
  • Inventor: Uri Cohen
  • Applicant: Uri Cohen
  • Main IPC: C03B9/10
  • IPC: C03B9/10
Floating Si and/or Ge foils
Abstract:
One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T2, wherein the density of Si and/or Ge is smaller than the density of the molten metallic bath; cooling the molten metallic bath to a lower temperature T1, thereby causing Si and/or Ge to separate out of the molten metallic bath and to float and grow as a Si and/or Ge foil on a top surface of the molten metallic bath; and separating the floating Si and/or Ge foil from the top surface of the molten metallic bath.
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