In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which a plurality of shaped beam shots is determined which will form a target pattern on a surface, within a predetermined tolerance, where the plurality of shaped beam shots includes a plurality of circular or nearly-circular character projection (CP) shots plus one or more non-circular shot, and where at least two shots in the plurality of circular or nearly-circular shots overlap. Methods for manufacturing a surface and for manufacturing a semiconductor device on a substrate are also disclosed.