Invention Grant
- Patent Title: Thin film transistor formed on flexible substrate and method of manufacturing the same
- Patent Title (中): 在柔性基板上形成的薄膜晶体管及其制造方法
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Application No.: US13267145Application Date: 2011-10-06
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Publication No.: US08501556B2Publication Date: 2013-08-06
- Inventor: Jang-yeon Kwon , Sang-yoon Lee , Jong-man Kim , Kyung-bae Park , Ji-sim Jung
- Applicant: Jang-yeon Kwon , Sang-yoon Lee , Jong-man Kim , Kyung-bae Park , Ji-sim Jung
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2006-0049993 20060602
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.
Public/Granted literature
- US20120028422A1 THIN FILM TRANSISTOR FORMED ON FLEXIBLE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-02-02
Information query
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