Invention Grant
- Patent Title: Method for fabricating deep trench isolation
- Patent Title (中): 深沟槽隔离方法
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Application No.: US13181689Application Date: 2011-07-13
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Publication No.: US08501565B2Publication Date: 2013-08-06
- Inventor: Yu-Lung Chin , Shang-Hui Tu , Shin-Cheng Lin
- Applicant: Yu-Lung Chin , Shang-Hui Tu , Shin-Cheng Lin
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW100102797A 20110126
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
The invention provides a method for fabricating a deep trench isolation including: providing a substrate; forming a first trench in the substrate; conformally forming a first liner layer on the sidewall and bottom of the first trench; forming a first filler layer on the first liner layer and filling the first trench; forming an epitaxial layer on the substrate and the first trench; forming a second trench through the epitaxial layer and over the first trench; conformally forming a second liner layer on the sidewall and bottom of the second trench; and forming a second filler layer on the second liner layer and filling the second trench.
Public/Granted literature
- US20120190169A1 METHOD FOR FABRICATING DEEP TRENCH ISOLATION Public/Granted day:2012-07-26
Information query
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