Invention Grant
- Patent Title: Method of manufacturing semiconductor device having silicon carbide layers containing phosphorus
- Patent Title (中): 制造含有磷的碳化硅层的半导体装置的制造方法
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Application No.: US13419713Application Date: 2012-03-14
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Publication No.: US08501571B2Publication Date: 2013-08-06
- Inventor: Naoyoshi Tamura
- Applicant: Naoyoshi Tamura
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2009-146657 20090619
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8238 ; H01L21/00 ; H01L21/20 ; H01L21/36 ; H01L33/00 ; H01L27/088
Abstract:
A semiconductor device includes a MOS transistor, a source electrode and a drain electrode on the MOS transistor each include a first carbon doped silicon layer including carbon at a first carbon concentration and phosphorus at a first phosphorus concentration and a second carbon doped silicon layer over the first silicon carbide layer, which includes phosphorus at a second phosphorus concentration higher than the first phosphorus concentration, and which includes carbon at a second carbon concentration less than or equal to the first carbon concentration.
Public/Granted literature
- US20120171834A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-07-05
Information query
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