Invention Grant
US08501593B2 Method of NiSiGe epitaxial growth by introducing Al interlayer
失效
通过引入Al中间层的NiSiGe外延生长方法
- Patent Title: Method of NiSiGe epitaxial growth by introducing Al interlayer
- Patent Title (中): 通过引入Al中间层的NiSiGe外延生长方法
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Application No.: US13260757Application Date: 2011-07-25
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Publication No.: US08501593B2Publication Date: 2013-08-06
- Inventor: Miao Zhang , Bo Zhang , Zhongying Xue , Xi Wang
- Applicant: Miao Zhang , Bo Zhang , Zhongying Xue , Xi Wang
- Applicant Address: CN Shanghai
- Assignee: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Current Assignee: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Current Assignee Address: CN Shanghai
- Agency: MKG, LLC
- Priority: CN201010532645 20101104
- International Application: PCT/CN2011/077528 WO 20110725
- International Announcement: WO2012/058947 WO 20120510
- Main IPC: H01L27/092
- IPC: H01L27/092
Abstract:
The present invention discloses a method of NiSiGe epitaxial growth by introducing Al interlayer, comprising the deposition of an Al thin film on the surface of SiGe layer, subsequent deposition of a Ni layer on Al thin film and then the annealing process for the reaction between Ni layer and SiGe material of SiGe layer to form NiSiGe material. Due to the barrier effect of Al interlayer, NiSiGe layer features a single crystal structure, a flat interface with SiGe substrate and a thickness of up to 0.3 nm, significantly enhancing interface performance.
Public/Granted literature
- US20120129320A1 METHOD OF NISIGE EPITAXIAL GROWTH BY INTRODUCING AL INTERLAYER Public/Granted day:2012-05-24
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