Invention Grant
US08501604B2 Method for forming a doped region in a semiconductor layer of a substrate and use of such method
有权
在基板的半导体层中形成掺杂区域的方法和使用这种方法
- Patent Title: Method for forming a doped region in a semiconductor layer of a substrate and use of such method
- Patent Title (中): 在基板的半导体层中形成掺杂区域的方法和使用这种方法
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Application No.: US13162507Application Date: 2011-06-16
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Publication No.: US08501604B2Publication Date: 2013-08-06
- Inventor: Sukhvinder Singh
- Applicant: Sukhvinder Singh
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/24
- IPC: H01L21/24
Abstract:
A method of forming a doped region in a semiconductor layer of a substrate by alloying with doping elements is disclosed. In one aspect, the method includes screen printing a paste layer of doping element paste to the substrate and firing the screen printed paste layer of doping element paste, wherein a highly pure doping element layer is applied to the semiconductor layer after which the paste layer is screen printed to the doping element layer.
Public/Granted literature
- US20110309489A1 METHOD FOR FORMING A DOPED REGION IN A SEMICONDUCTOR LAYER OF A SUBSTRATE AND USE OF SUCH METHOD Public/Granted day:2011-12-22
Information query
IPC分类:
