Invention Grant
- Patent Title: UBM etching methods for eliminating undercut
- Patent Title (中): 用于消除底切的UBM蚀刻方法
-
Application No.: US13178276Application Date: 2011-07-07
-
Publication No.: US08501613B2Publication Date: 2013-08-06
- Inventor: Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
- Applicant: Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.
Public/Granted literature
- US20130012014A1 UBM Etching Methods for Eliminating Undercut Public/Granted day:2013-01-10
Information query
IPC分类:
