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US08501616B2 Self-aligned protection layer for copper post structure 有权
铜柱结构自对准保护层

Self-aligned protection layer for copper post structure
Abstract:
A semiconductor device including a semiconductor substrate and a conductive post overlying and electrically connected to the substrate. The semiconductor device further includes a manganese-containing protection layer on a surface of the conductive post. A method of forming a semiconductor device. The method includes forming a bond pad region on a semiconductor substrate. The method further includes forming a conductive post overlying and electrically connected to the bond pad region. The method further includes forming a protection layer on a surface of the conductive post, wherein the protection layer comprises manganese (Mn).
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