Invention Grant
- Patent Title: Self-aligned protection layer for copper post structure
- Patent Title (中): 铜柱结构自对准保护层
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Application No.: US13660348Application Date: 2012-10-25
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Publication No.: US08501616B2Publication Date: 2013-08-06
- Inventor: Chung-Shi Liu , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A semiconductor device including a semiconductor substrate and a conductive post overlying and electrically connected to the substrate. The semiconductor device further includes a manganese-containing protection layer on a surface of the conductive post. A method of forming a semiconductor device. The method includes forming a bond pad region on a semiconductor substrate. The method further includes forming a conductive post overlying and electrically connected to the bond pad region. The method further includes forming a protection layer on a surface of the conductive post, wherein the protection layer comprises manganese (Mn).
Public/Granted literature
- US20130049194A1 SELF-ALIGNED PROTECTION LAYER FOR COPPER POST STRUCTURE Public/Granted day:2013-02-28
Information query
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