A semiconductor chip carrier having multiple conductive layers separated from each other by dielectric layers, a chip bonding position at an intermediate portion of a top surface of the semiconductor chip carrier, and a bonding region spaced apart from the chip bonding position. The bonding region includes a first bonding region closest to the chip bonding position, a second bonding region most distant from the chip bonding position, and a third bonding region positioned between the first bonding region and the second bonding region. The first bonding region, the second bonding region and the third bonding region are electrically insulated from each other and the first bonding region is configured to carry a first voltage, the second bonding region is configured to carry a second voltage and the third bonding region is configured to carry a third voltage that is less than the first voltage and less than the second voltage.