Invention Grant
- Patent Title: Memory device having self-aligned cell structure
- Patent Title (中): 具有自对准单元结构的存储器件
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Application No.: US12367395Application Date: 2009-02-06
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Publication No.: US08502182B2Publication Date: 2013-08-06
- Inventor: Jun Liu , Michael P. Violette
- Applicant: Jun Liu , Michael P. Violette
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L21/311 ; G06F13/28
Abstract:
Some embodiments include apparatus and methods having a memory device with diodes coupled to memory elements. Each diode may be formed in a recess of the memory device. The recess may have a polygonal sidewall. The diode may include a first material of a first conductivity type (e.g., n-type) and a second material of a second conductive type (e.g., p-type) formed within the recess.
Public/Granted literature
- US20100200830A1 MEMORY DEVICE HAVING SELF-ALIGNED CELL STRUCTURE Public/Granted day:2010-08-12
Information query
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