Invention Grant
US08502191B2 Semiconductor device, manufacturing method therefor, and solar cell
有权
半导体装置及其制造方法以及太阳能电池
- Patent Title: Semiconductor device, manufacturing method therefor, and solar cell
- Patent Title (中): 半导体装置及其制造方法以及太阳能电池
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Application No.: US13318913Application Date: 2010-05-11
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Publication No.: US08502191B2Publication Date: 2013-08-06
- Inventor: Takashi Suemasu , Noritaka Usami
- Applicant: Takashi Suemasu , Noritaka Usami
- Applicant Address: JP Tsukuba-shi JP Sendai-shi
- Assignee: University of Tsukuba,Tohoku University
- Current Assignee: University of Tsukuba,Tohoku University
- Current Assignee Address: JP Tsukuba-shi JP Sendai-shi
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2009-115337 20090512; JP2009-185666 20090810
- International Application: PCT/JP2010/057936 WO 20100511
- International Announcement: WO2010/131639 WO 20101118
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109 ; H01L21/20 ; H01L21/36
Abstract:
A semiconductor device includes: a silicon layer (12); an intermediate silicide layer (28) that is provided on the silicon layer (12), has openings, and includes barium silicide; and an upper silicide layer (14) that covers the intermediate silicide layer (28), is positioned to be in contact with the silicon layer (12) through the openings, has a higher dopant concentration than the dopant concentration of the intermediate silicide layer (28), and includes barium silicide.
Public/Granted literature
- US20120049150A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREFOR, AND SOLAR CELL Public/Granted day:2012-03-01
Information query
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