Invention Grant
US08502218B2 Large-area, free-standing metal oxide films and transistors made therefrom 有权
大面积,独立的金属氧化物膜和由其制成的晶体管

Large-area, free-standing metal oxide films and transistors made therefrom
Abstract:
The present invention provides continuous, free-standing metal oxide films and methods for making said films. The methods are able to produce large-area, flexible, thin films having one or more continuous, single-crystalline metal oxide domains. The methods include the steps of forming a surfactant monolayer at the surface of an aqueous solution, wherein the headgroups of the surfactant molecules provide a metal oxide film growth template. When metal ions in the aqueous solution are exposed to the metal oxide film growth template in the presence of hydroxide ions under suitable conditions, a continuous, free-standing metal oxide film can be grown from the film growth template downward into the aqueous solution.
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