Invention Grant
US08502218B2 Large-area, free-standing metal oxide films and transistors made therefrom
有权
大面积,独立的金属氧化物膜和由其制成的晶体管
- Patent Title: Large-area, free-standing metal oxide films and transistors made therefrom
- Patent Title (中): 大面积,独立的金属氧化物膜和由其制成的晶体管
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Application No.: US12723190Application Date: 2010-03-12
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Publication No.: US08502218B2Publication Date: 2013-08-06
- Inventor: Xudong Wang , Zhenqiang Ma , Fei Wang , Jung-Hun Seo
- Applicant: Xudong Wang , Zhenqiang Ma , Fei Wang , Jung-Hun Seo
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Agency: Bell & Manning, LLC
- Main IPC: H01L29/12
- IPC: H01L29/12

Abstract:
The present invention provides continuous, free-standing metal oxide films and methods for making said films. The methods are able to produce large-area, flexible, thin films having one or more continuous, single-crystalline metal oxide domains. The methods include the steps of forming a surfactant monolayer at the surface of an aqueous solution, wherein the headgroups of the surfactant molecules provide a metal oxide film growth template. When metal ions in the aqueous solution are exposed to the metal oxide film growth template in the presence of hydroxide ions under suitable conditions, a continuous, free-standing metal oxide film can be grown from the film growth template downward into the aqueous solution.
Public/Granted literature
- US20110220887A1 LARGE-AREA, FREE-STANDING METAL OXIDE FILMS AND TRANSISTORS MADE THEREFROM Public/Granted day:2011-09-15
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