Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12848406Application Date: 2010-08-02
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Publication No.: US08502220B2Publication Date: 2013-08-06
- Inventor: Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
- Applicant: Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-185318 20090807
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/38 ; H01L33/36

Abstract:
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.
Public/Granted literature
- US20110031493A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-02-10
Information query
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