Invention Grant
US08502222B2 Amorphous oxide semiconductor, semiconductor device, thin film transistor and display device
有权
无定形氧化物半导体，半导体器件，薄膜晶体管和显示器件
- Patent Title: Amorphous oxide semiconductor, semiconductor device, thin film transistor and display device
- Patent Title (中): 无定形氧化物半导体，半导体器件，薄膜晶体管和显示器件
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Application No.: US13403536Application Date: 2012-02-23
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Publication No.: US08502222B2Publication Date: 2013-08-06
- Inventor: Hisato Yabuta , Ayanori Endo , Nobuyuki Kaji , Ryo Hayashi
- Applicant: Hisato Yabuta , Ayanori Endo , Nobuyuki Kaji , Ryo Hayashi
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-115617 20070425
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M≧0.94×(7.121x+5.941y+5.675z)/(x+y+z) (1) where 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≠0.
Public/Granted literature
- US20120146021A1 AMORPHOUS OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, THIN FILM TRANSISTOR AND DISPLAY DEVICE Public/Granted day:2012-06-14
Information query
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