Invention Grant
- Patent Title: Light-emitting device and method for manufacturing the same
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Application No.: US12871176Application Date: 2010-08-30
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Publication No.: US08502225B2Publication Date: 2013-08-06
- Inventor: Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
- Applicant: Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-204972 20090904
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L31/00

Abstract:
An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
Public/Granted literature
- US20110210355A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-09-01
Information query
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