Invention Grant
- Patent Title: Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
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Application No.: US12370479Application Date: 2009-02-12
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Publication No.: US08502246B2Publication Date: 2013-08-06
- Inventor: Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
- Applicant: Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
- Applicant Address: US CA Oakland JP Kawaguchi, Saitama Prefecture
- Assignee: The Regents of the University of California,The Japan Science and Technology Agency
- Current Assignee: The Regents of the University of California,The Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland JP Kawaguchi, Saitama Prefecture
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/18
- IPC: H01L33/18 ; H01L33/06
Abstract:
A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
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