Invention Grant
- Patent Title: Barrier photodetector with planar top layer
- Patent Title (中): 具有平面顶层的阻挡光电探测器
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Application No.: US12910655Application Date: 2010-10-22
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Publication No.: US08502271B2Publication Date: 2013-08-06
- Inventor: Jeffrey Winfield Scott
- Applicant: Jeffrey Winfield Scott
- Applicant Address: US MD Bethesda
- Assignee: Lockheed Martin Corporation
- Current Assignee: Lockheed Martin Corporation
- Current Assignee Address: US MD Bethesda
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L31/102
- IPC: H01L31/102

Abstract:
A barrier-type photo-detector is provided with a Barrier between first and second layers. One of the layers is delineated into pixels without fully removing the non-pixel portions of the delineated layer. Delineation may be accomplished through material modification techniques such as ion damage, selective doping, ion induced disordering or layer material growth. Some variations may employ partial material removal techniques.
Public/Granted literature
- US20110095334A1 BARRIER PHOTODETECTOR WITH PLANAR TOP LAYER Public/Granted day:2011-04-28
Information query
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