Invention Grant
- Patent Title: Etch stop layers and methods of forming the same
- Patent Title (中): 蚀刻停止层及其形成方法
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Application No.: US12841245Application Date: 2010-07-22
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Publication No.: US08502286B2Publication Date: 2013-08-06
- Inventor: Ha-Jin Lim , Dong-Suk Shin , Pan-Kwi Park
- Applicant: Ha-Jin Lim , Dong-Suk Shin , Pan-Kwi Park
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2009-0067120 20090723
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A semiconductor device includes a MOSFET, and a plurality of stress layers disposed on the MOSFET, wherein the stress layers include a first stress layer disposed on the MOSFET and a second stress layer disposed on the first stress layer, the first stress layer has a first stress and the second stress layer has a second stress, and the first stress is different from the second stress.
Public/Granted literature
- US20110018044A1 ETCH STOP LAYERS AND METHODS OF FORMING THE SAME Public/Granted day:2011-01-27
Information query
IPC分类:
