Invention Grant
US08502291B2 Memory cells, memory cell constructions, and memory cell programming methods
有权
存储单元，存储单元构造和存储单元编程方法
- Patent Title: Memory cells, memory cell constructions, and memory cell programming methods
- Patent Title (中): 存储单元，存储单元构造和存储单元编程方法
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Application No.: US13091000Application Date: 2011-04-20
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Publication No.: US08502291B2Publication Date: 2013-08-06
- Inventor: Chandra Mouli
- Applicant: Chandra Mouli
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L31/119
Abstract:
Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and the second conductive material. A resistance of the memory component is configurable via a current conducted from the first conductive material through the oxide material to the second conductive material. Other embodiments include a diode comprising metal and a dielectric material and a memory component connected in series with the diode. The memory component includes a magnetoresistive material and has a resistance that is changeable via a current conducted through the diode and the magnetoresistive material.
Public/Granted literature
- US20110194336A1 Memory Cells, Memory Cell Constructions, and Memory Cell Programming Methods Public/Granted day:2011-08-11
Information query
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