A level shifter circuit for integrated circuits has one or more inputs that operate in a first voltage domain, and a signal output that operates in a second voltage domain. In some embodiments, the level shifter circuit receives two complementary input signals. The level shifter uses cross-coupled PMOS transistors with drain-bulk breakdown voltage less than the gate-oxide breakdown voltage of high-voltage PMOS transistors to prevent gate-oxide breakdown caused by sub-threshold leakage of auxiliary high-voltage PMOS transistors in the off state. Permanent gate-oxide breakdown is prevented through non-permanent sub-nanoamp drain-bulk junction breakdown. The level shifter circuit has the advantages of small circuit size and low static power consumption.