Invention Grant
US08502318B2 SRAM memory cell provided with transistors having a vertical multichannel structure
有权
具有垂直多通道结构的晶体管的SRAM存储单元
- Patent Title: SRAM memory cell provided with transistors having a vertical multichannel structure
- Patent Title (中): 具有垂直多通道结构的晶体管的SRAM存储单元
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Application No.: US12740907Application Date: 2008-11-07
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Publication No.: US08502318B2Publication Date: 2013-08-06
- Inventor: Olivier Thomas , Thomas Ernst
- Applicant: Olivier Thomas , Thomas Ernst
- Applicant Address: FR Paris
- Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0758935 20071109
- International Application: PCT/EP2008/065103 WO 20081107
- International Announcement: WO2009/060052 WO 20090514
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A microelectronic device including, on a substrate, at least one element such as a SRAM memory cell; one or more first transistor(s), respectively including a number k of channels (k≧1) parallel in a direction forming a non-zero angle with the main plane of the substrate, and one or more second transistor(s), respectively including a number m of channels, such that m>k, parallel in a direction forming a non-zero angle, or an orthogonal direction, with the main plane of the substrate.
Public/Granted literature
- US20100264496A1 SRAM MEMORY CELL PROVIDED WITH TRANSISTORS HAVING A VERTICAL MULTICHANNEL STRUCTURE Public/Granted day:2010-10-21
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