Invention Grant
- Patent Title: Nonvolatile memory device and manufacturing method thereof
- Patent Title (中): 非易失存储器件及其制造方法
-
Application No.: US13044973Application Date: 2011-03-10
-
Publication No.: US08502322B2Publication Date: 2013-08-06
- Inventor: Hiroyuki Nitta
- Applicant: Hiroyuki Nitta
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-066801 20100323
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/108 ; H01L29/94 ; H01L29/06 ; H01L47/00
Abstract:
According to the nonvolatile memory device in one embodiment, contact plugs connect between second wires and third wires in a memory layer and a first wire connected to a control element. Drawn wire portions connect the second wires and the third wires with the contact plug. The drawn wire portion connected to the second wires and the third wires of the memory layer is formed of a wire with a critical dimension same as the second wires and the third wires and is in contact with the contact plug on an upper surface and both side surfaces of the drawn wire portion.
Public/Granted literature
- US20110233505A1 NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-09-29
Information query
IPC分类:
