Invention Grant
US08502323B2 Reliable normally-off III-nitride active device structures, and related methods and systems
有权
可靠的常规III族氮化物活性器件结构及相关方法和系统
- Patent Title: Reliable normally-off III-nitride active device structures, and related methods and systems
- Patent Title (中): 可靠的常规III族氮化物活性器件结构及相关方法和系统
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Application No.: US12185241Application Date: 2008-08-04
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Publication No.: US08502323B2Publication Date: 2013-08-06
- Inventor: Jing Chen
- Applicant: Jing Chen
- Applicant Address: HK Kowloon
- Assignee: The Hong Kong University of Science and Technology
- Current Assignee: The Hong Kong University of Science and Technology
- Current Assignee Address: HK Kowloon
- Agency: Turocy & Watson, LLP
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A field-effect transistor includes a first gate, a second gate held at a substantially fixed potential in a cascode configuration, and a semiconductor channel. The semiconductor channel has an enhancement mode portion and a depletion mode portion. The enhancement mode portion is gated to be turned on and off by the first gate, and has been modified to operate in enhancement mode. The depletion mode portion is gated by the second gate, and has been modified to operate in depletion mode and that is operative to shield the first gate from voltage stress.
Public/Granted literature
- US20090032820A1 Reliable Normally-Off III-Nitride Active Device Structures, and Related Methods and Systems Public/Granted day:2009-02-05
Information query
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