Invention Grant
- Patent Title: Semiconductor diode and method of manufacture
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Application No.: US13109906Application Date: 2011-05-17
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Publication No.: US08502336B2Publication Date: 2013-08-06
- Inventor: Gordon M. Grivna , Jefferson W. Hall , Mohammed Tanvir Quddus
- Applicant: Gordon M. Grivna , Jefferson W. Hall , Mohammed Tanvir Quddus
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Kevin B. Jackson; Gary W. Hoshizaki
- Main IPC: H01L29/872
- IPC: H01L29/872
Abstract:
A diode (200) is disclosed having improved efficiency, smaller form factor, and reduced reverse biased leakage current. Schottky diodes (212) are formed on the sidewalls (210) of a mesa region (206). The mesa region (206) is a cathode of the Schottky diode (212). The current path through the mesa region (206) has a lateral and a vertical current path. The diode (200) further comprises a MOS structure (214), p-type regions (220), MOS structures (230), and p-type regions (232). MOS structure (214) with the p-type regions (220) pinch-off the lateral current path under reverse bias conditions. P-type regions (220), MOS structures (230), and p-type regions (232) each pinch-off the vertical current path under reverse bias conditions. MOS structure (214) and MOS structures (230) reduce resistance of the lateral and vertical current path under forward bias conditions. The mesa region (206) can have a uniform or non-uniform doping concentration.
Public/Granted literature
- US20120292732A1 SEMICONDUCTOR DIODE AND METHOD OF MANUFACTURE Public/Granted day:2012-11-22
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