Invention Grant
US08502364B2 Semiconductor device member, production method of semiconductor-device-member formation liquid and semiconductor device member, and semiconductor-device-member formation liquid, phosphor composition, semiconductor light-emitting device, lighting system and image display system using the same
有权
半导体器件部件,半导体器件部件形成液体和半导体器件部件的制造方法以及半导体器件部件形成液体,荧光体组合物,半导体发光器件,照明系统和使用其的图像显示系统
- Patent Title: Semiconductor device member, production method of semiconductor-device-member formation liquid and semiconductor device member, and semiconductor-device-member formation liquid, phosphor composition, semiconductor light-emitting device, lighting system and image display system using the same
- Patent Title (中): 半导体器件部件,半导体器件部件形成液体和半导体器件部件的制造方法以及半导体器件部件形成液体,荧光体组合物,半导体发光器件,照明系统和使用其的图像显示系统
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Application No.: US12438283Application Date: 2007-08-22
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Publication No.: US08502364B2Publication Date: 2013-08-06
- Inventor: Hanako Kato , Yutaka Mori , Hiroshi Kobayashi , Tsubasa Tomura
- Applicant: Hanako Kato , Yutaka Mori , Hiroshi Kobayashi , Tsubasa Tomura
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Chemical Corporation
- Current Assignee: Mitsubishi Chemical Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-225410 20060822
- International Application: PCT/JP2007/066310 WO 20070822
- International Announcement: WO2008/023746 WO 20080228
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L31/0312 ; H01L23/58 ; H01L23/02 ; H01L51/00

Abstract:
To provide a semiconductor device member that is superior in heat resistance, light resistance, film-formation capability and adhesion, and is capable of sealing a semiconductor device and holding a phosphor without causing cracks, peelings and colorings even after used for a long period of time, the weight loss at the time of heating, measured by a predetermined weight-loss at-the-time-of-heating measurement method, is 50 weight % or lower and the ratio of peeling, measured by a predetermined adhesion evaluation method, is 30% or lower, in the semiconductor device member.
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