Invention Grant
- Patent Title: Semiconductor device and power semiconductor device
- Patent Title (中): 半导体器件和功率半导体器件
-
Application No.: US13052021Application Date: 2011-03-18
-
Publication No.: US08502365B2Publication Date: 2013-08-06
- Inventor: Kazuaki Onishi
- Applicant: Kazuaki Onishi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2010-107971 20100510
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
According to one embodiment, a semiconductor device includes a casing, a semiconductor element, a terminal and a screw member. The semiconductor element is housed within the casing. The terminal is electrically connected to the semiconductor element, and has an externally projecting part extending out of the casing. The screw member is movably provided along a surface of the casing between the externally projecting part and the casing, and fixes an external terminal to the externally projecting part.
Public/Granted literature
- US20110272797A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND POWER SEMICONDUCTOR DEVICE Public/Granted day:2011-11-10
Information query
IPC分类:
