Invention Grant
- Patent Title: 3-D integrated circuit lateral heat dissipation
- Patent Title (中): 3-D集成电路横向散热
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Application No.: US12115076Application Date: 2008-05-05
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Publication No.: US08502373B2Publication Date: 2013-08-06
- Inventor: Kenneth Kaskoun , Shiqun Gu , Matthew Nowak
- Applicant: Kenneth Kaskoun , Shiqun Gu , Matthew Nowak
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Michelle Gallardo
- Main IPC: H01L23/34
- IPC: H01L23/34
Abstract:
By filling an air gap between tiers of a stacked IC device with a thermally conductive material, heat generated at one or more locations within one of the tiers can be laterally displaced. The lateral displacement of the heat can be along the full length of the tier and the thermal material can be electrically insulating. Through silicon-vias (TSVs) can be constructed at certain locations to assist in heat dissipation away from thermally troubled locations.
Public/Granted literature
- US20090273068A1 3-D Integrated Circuit Lateral Heat Dissipation Public/Granted day:2009-11-05
Information query
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