Invention Grant
- Patent Title: Semiconductor device and a method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13413914Application Date: 2012-03-07
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Publication No.: US08502395B2Publication Date: 2013-08-06
- Inventor: Masachika Masuda , Toshihiko Usami
- Applicant: Masachika Masuda , Toshihiko Usami
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2000-022802 20000131
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device featuring a substrate having a first surface defined by a first edge and an opposing second edge, electrode pads formed on the first surface, a first semiconductor chip mounted over the first surface between the first edge and the electrode pads and including first pads each electrically connected to a corresponding electrode pad, a second semiconductor chip stacked over the first semiconductor chip and including second pads each electrically connected to a corresponding electrode pad, a third semiconductor chip mounted over the first surface of the substrate between the second edge and the electrode pads and including third pads each electrically connected to a corresponding electrode pad, in which one electrode pad is electrically connected to one first pad, one second pad and one third pad and another electrode pad is electrically connected to a first pad and a second pad corresponding thereto, via separate bonding wires.
Public/Granted literature
- US20120168965A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-07-05
Information query
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