Invention Grant
- Patent Title: High voltage control circuit of semiconductor device
- Patent Title (中): 半导体器件高压控制电路
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Application No.: US13160230Application Date: 2011-06-14
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Publication No.: US08502591B2Publication Date: 2013-08-06
- Inventor: Chae Kyu Jang
- Applicant: Chae Kyu Jang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0066495 20100709; KR10-2010-0075249 20100804
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A high voltage control circuit of a semiconductor device includes an output node control circuit configured to set an initial potential of an output terminal or to discharge the potential of the output terminal, in response to an input signal and a high voltage supply circuit comprising an acceleration unit and a potential control unit coupled in series between the output terminal and a supply terminal for supplying a high voltage. The acceleration unit is operated in response to the potential of the output terminal, and the potential control unit is operated in response to the input signal.
Public/Granted literature
- US20120007662A1 HIGH VOLTAGE CONTROL CIRCUIT OF SEMICONDUCTOR DEVICE Public/Granted day:2012-01-12
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