Invention Grant
- Patent Title: System and method for voltage-based plasma excursion detection
- Patent Title (中): 基于电压的等离子体偏移检测系统和方法
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Application No.: US12888790Application Date: 2010-09-23
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Publication No.: US08502689B2Publication Date: 2013-08-06
- Inventor: Jian J. Chen , Mohamad Ayoub
- Applicant: Jian J. Chen , Mohamad Ayoub
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: G08B21/00
- IPC: G08B21/00

Abstract:
The present invention provides a system and method for the detection of plasma excursions, such as arcs, micro-arcs, or other plasma instability, during plasma processing by directly monitoring direct current (DC) bias voltage on an RF power electrode of a plasma processing chamber. The monitored DC bias voltage is then passed through a succession of analog filters and amplifiers to provide a plasma excursion signal. The plasma excursion signal is compared to a preset value, and at points where the plasma excursion signal exceeds the preset value, an alarm signal is generated. The alarm signal is then fed back into a system controller so that an operator can be alerted and/or the processing system can be shut down. In certain embodiments, multiple processing regions can be monitored by a single detection control unit.
Public/Granted literature
- US20120075108A1 SYSTEM AND METHOD FOR VOLTAGE-BASED PLASMA EXCURSION DETECTION Public/Granted day:2012-03-29
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