Invention Grant
- Patent Title: Infrared solid-state imaging device
- Patent Title (中): 红外固态成像装置
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Application No.: US12721249Application Date: 2010-03-10
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Publication No.: US08502872B2Publication Date: 2013-08-06
- Inventor: Masashi Ueno
- Applicant: Masashi Ueno
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-064470 20090317
- Main IPC: H04N7/18
- IPC: H04N7/18

Abstract:
A thermal infrared solid-state imaging device includes a pixel array having pixels diodes, a vertical power supply line connected to horizontal drive lines and commonly connecting the horizontal drive lines, integrating circuits for integrating voltages at the ends of the vertical signal lines for a predetermined integration time, and current sources connected to the vertical signal lines at an opposite end to the end of the vertical signal line which is connected to the integrating circuit. The integration time is equally divided substantially into two periods, and during one divided period of the integration time, energization is performed between one end of the vertical power supply line and the current source, and during the other divided period of the integration time, the energization is performed between other end of the vertical power supply line and the current source.
Public/Granted literature
- US20100238295A1 INFRARED SOLID-STATE IMAGING DEVICE Public/Granted day:2010-09-23
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