Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13039672Application Date: 2011-03-03
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Publication No.: US08502902B2Publication Date: 2013-08-06
- Inventor: Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura
- Applicant: Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2010-054006 20100311
- Main IPC: H04N5/222
- IPC: H04N5/222

Abstract:
A semiconductor device obtains highly accurate image data regardless of the intensity of incident light. The semiconductor device includes a first photo sensor provided in a pixel, a second photo sensor provided around the pixel, and a controller for setting the drive condition of the first photo sensor in accordance with the intensity of outside light obtained by the second photo sensor. An image is taken after the sensitivity of the first photo sensor is changed in accordance with the drive condition set by the controller. Thus, in the semiconductor device, an image can be taken using the first photo sensor whose sensitivity is optimized in accordance with the intensity of incident light.
Public/Granted literature
- US20110221945A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-09-15
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