Invention Grant
- Patent Title: Magneto-elastic anisotropy assisted thin film structure
- Patent Title (中): 磁弹各向异性辅助薄膜结构
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Application No.: US13352692Application Date: 2012-01-18
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Publication No.: US08503126B2Publication Date: 2013-08-06
- Inventor: Yiao-Tee Hsia , Wei Peng , Timothy J. Klemmer
- Applicant: Yiao-Tee Hsia , Wei Peng , Timothy J. Klemmer
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hall Estill Attorneys at Law
- Main IPC: G11B5/02
- IPC: G11B5/02 ; H01F7/06
Abstract:
A method includes activating a stress-effecting layer of a thin film structure, having the stress effecting layer adjacent to a magnetic layer, to induce a magneto-elastic anisotropy in the magnetic layer.
Public/Granted literature
- US20120113541A1 Magneto-Elastic Anisotropy Assisted Thin Film Structure Public/Granted day:2012-05-10
Information query
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