Invention Grant
- Patent Title: Magnetic sensor with enhanced magnetoresistance ratio
- Patent Title (中): 磁传感器具有增强的磁阻比
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Application No.: US13238981Application Date: 2011-09-21
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Publication No.: US08503135B2Publication Date: 2013-08-06
- Inventor: Mark William Covington , Qing He , Wonjoon Jung , Vladyslav Alexandrovich Vas'ko
- Applicant: Mark William Covington , Qing He , Wonjoon Jung , Vladyslav Alexandrovich Vas'ko
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hall Estill Attorneys at Law
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
Various embodiments of the present invention are generally directed to a magnetically responsive lamination that may be constructed with a spacer layer disposed between a first and second ferromagnetic free layer. At least one ferromagnetic free layer can have a coupling sub-layer that enhances magnetoresistance ratio (MR) of the magnetically responsive lamination.
Public/Granted literature
- US20130071691A1 Magnetic Sensor With Enhanced Magnetoresistance Ratio Public/Granted day:2013-03-21
Information query
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