Invention Grant
- Patent Title: MEMS device
- Patent Title (中): MEMS器件
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Application No.: US12883685Application Date: 2010-09-16
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Publication No.: US08503157B2Publication Date: 2013-08-06
- Inventor: Tamio Ikehashi
- Applicant: Tamio Ikehashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2009-214849 20090916
- Main IPC: H01G7/00
- IPC: H01G7/00 ; H01G7/06 ; H01G5/00

Abstract:
Provided is a MEMS device that includes first and second lower electrodes on a substrate. The MEMS device also includes a first driving electrode forming a capacitance element having a first capacitance between the first lower electrode and the first driving electrode, a second driving electrode forming a capacitance element having a second capacitance between the second lower electrode and the second driving electrode, and an upper electrode supported in midair above the driving electrodes. The upper electrode moves toward the driving electrodes and has a variable third capacitance between the first driving electrode and the upper electrode and a variable fourth capacitance between the second driving electrode and the upper electrode.
Public/Granted literature
- US20110063773A1 MEMS DEVICE Public/Granted day:2011-03-17
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