Invention Grant
- Patent Title: High boost ratio DC converter
- Patent Title (中): 高增压比DC转换器
-
Application No.: US13107844Application Date: 2011-05-13
-
Publication No.: US08503198B2Publication Date: 2013-08-06
- Inventor: Ching-Tsai Pan , Chao-Han Lee
- Applicant: Ching-Tsai Pan , Chao-Han Lee
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agent Cheng-Ju Chiang
- Priority: TW100111203A 20110331
- Main IPC: H02M3/335
- IPC: H02M3/335 ; G05F1/00

Abstract:
Disclosed is a high boost ratio DC converter, wherein the first and second switches are controlled by a control chip and the control chip controls the first and second switches in the following sequence: the first and second switches both conduct; the first switch conducts and the second switch is cut off; the first and second switches both conduct; the first switch is cut off and the second switch conducts thus making a first and second inductors and a first and second clamp capacitors charge to a first and second output capacitors. Then the first and second output capacitors discharge a load. Therefore, the load voltage output from the DC power supply will be boosted owing to the discharged load from the first and second output capacitors. The boost ratio is 4/(1−D).
Public/Granted literature
- US20120249100A1 HIGH BOOST RATIO DC CONVERTER Public/Granted day:2012-10-04
Information query
IPC分类: