Invention Grant
- Patent Title: Programmable resistance memory with feedback control
- Patent Title (中): 具有反馈控制的可编程电阻存储器
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Application No.: US13158531Application Date: 2011-06-13
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Publication No.: US08503219B2Publication Date: 2013-08-06
- Inventor: Ward Parkinson
- Applicant: Ward Parkinson
- Applicant Address: US MI Sterling Heights
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Sterling Heights
- Agent Kevin L. Bray
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A programmable resistance memory employs a feedback control circuit to regulate the programming current supplied to a selected programmable resistance memory element. The programmable resistance memory may be a phase change memory. The feedback control circuit monitors and controls the characteristics of a current pulse employed to program a memory cell.
Public/Granted literature
- US20110242887A1 Programmable Resistance Memory with Feedback Control Public/Granted day:2011-10-06
Information query
