In a memory, the MTJ elements respectively have a first end electrically connected to any one of a source and a drain of one of the cell transistors. First bit lines each of which is electrically connected to the other one of the source and the drain of one of the cell transistors. Second bit lines each of which is electrically connected to a second end of one of the MTJ elements. Word lines each of which is electrically connected to a gate of one of the cell transistors or functions as a gate of one of the cell transistors. A plurality of the second bit lines correspond to one of the first bit lines. A plurality of the MTJ elements share the same word line and the same active area. The active area is continuously formed in an extending direction of the first and second bit lines.