Non-volatile storage elements having a P−/metal floating gate are disclosed herein. The floating gate may have a P− region near the tunnel oxide, and may have a metal region near the control gate. A P− region near the tunnel oxide helps provide good data retention. A metal region near the control gate helps to achieve a good coupling ratio between the control gate and floating gate. Therefore, programming of non-volatile storage elements is efficient. Also, erasing the non-volatile storage elements may be efficient. In some embodiments, having a P− region near the tunnel oxide (as opposed to a strongly doped p-type semiconductor) may improve erase efficiency relative to P+.