Invention Grant
US08503247B2 Semiconductor storage apparatus, and method and system for boosting word lines
有权
半导体存储装置以及用于增强字线的方法和系统
- Patent Title: Semiconductor storage apparatus, and method and system for boosting word lines
- Patent Title (中): 半导体存储装置以及用于增强字线的方法和系统
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Application No.: US12826054Application Date: 2010-06-29
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Publication No.: US08503247B2Publication Date: 2013-08-06
- Inventor: Hiroshi Yoshioka
- Applicant: Hiroshi Yoshioka
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2009-183251 20090806
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A semiconductor storage apparatus includes: a word line coupled to a cell transistor; a first capacitor having a first end coupled to the word line; a boost driver coupled to a second end of the first capacitor; a voltage-drop circuit configured to generate a given voltage drop between a first voltage and a second voltage; and a boost-drive circuit configured to boost a voltage at the second end from the second voltage to the first voltage.
Public/Granted literature
- US20110032783A1 SEMICONDUCTOR STORAGE APPARATUS, AND METHOD AND SYSTEM FOR BOOSTING WORD LINES Public/Granted day:2011-02-10
Information query
