Invention Grant
US08503253B2 Supply voltage generating circuit and semiconductor device having the same
有权
电源电压生成电路及具有该电源电路的半导体装置
- Patent Title: Supply voltage generating circuit and semiconductor device having the same
- Patent Title (中): 电源电压生成电路及具有该电源电路的半导体装置
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Application No.: US13647626Application Date: 2012-10-09
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Publication No.: US08503253B2Publication Date: 2013-08-06
- Inventor: Shuichi Tsukada
- Applicant: Elpida Memory, Inc.
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-135209 20090604
- Main IPC: G11C7/06
- IPC: G11C7/06

Abstract:
A supply voltage generating circuit includes a first charge pump circuit that generates a first internal supply voltage, and second charge pump circuit that generates a second internal supply voltage. The absolute value of the second internal supply voltage is greater than that of the first internal supply voltage. The output terminal of the first charge pump circuit is connected to a secondary-side charging terminal of the second charge pump circuit. The secondary-side is an output-side of the corresponding charge pump circuit, and the charging terminal is an auxiliary charging terminal that supplies an auxiliary charge to a secondary-side output terminal of the corresponding charge pump circuit. The output terminal of the second charge pump circuit outputs a voltage value that is the result of adding a prescribed voltage value to the value of the first internal supply voltage applied to the charging terminal.
Public/Granted literature
- US20130033930A1 SUPPLY VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME Public/Granted day:2013-02-07
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