Invention Grant
US08504763B2 Method and memory device that powers-up in a read-only mode and is switchable to a read/write mode
有权
在只读模式下上电并可切换到读/写模式的方法和存储器件
- Patent Title: Method and memory device that powers-up in a read-only mode and is switchable to a read/write mode
- Patent Title (中): 在只读模式下上电并可切换到读/写模式的方法和存储器件
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Application No.: US13571937Application Date: 2012-08-10
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Publication No.: US08504763B2Publication Date: 2013-08-06
- Inventor: Richard Matthew Fruin , Christopher S. Moore , Samuel Y. Yu
- Applicant: Richard Matthew Fruin , Christopher S. Moore , Samuel Y. Yu
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Brinks Hofer Gilson & Lione
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
One-time programmable (OTP) and write-once read-many (WORM) memory devices and methods for use therewith are provided. These embodiments can be used to provide compatibility between a memory device that uses an OTP (or few-time programmable (FTP)) memory array and host devices that use a file system, such as the DOS FAT file system, that expects to be able to rewrite to a memory address in the memory device. These embodiments can also be used to prevent accidental or deliberate overwrites, changes, or deletions to existing data in a WORM memory device.
Public/Granted literature
- US20120303881A1 Method and Memory Device that Powers-Up in a Read-Only Mode and Is Switchable to a Read/Write Mode Public/Granted day:2012-11-29
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