Invention Grant
- Patent Title: Silica glass crucible for pulling up silicon single crystal, method for manufacturing thereof and method for manufacturing silicon single crystal
- Patent Title (中): 用于提拉硅单晶的硅玻璃坩埚，其制造方法和单晶硅的制造方法
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Application No.: US12607519Application Date: 2009-10-28
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Publication No.: US08506708B2Publication Date: 2013-08-13
- Inventor: Masanori Fukui , Satoshi Kudo
- Applicant: Masanori Fukui , Satoshi Kudo
- Applicant Address: JP Akita
- Assignee: Japan Super Quartz Corporation
- Current Assignee: Japan Super Quartz Corporation
- Current Assignee Address: JP Akita
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2008-282244 20081031; JP2008-282245 20081031; JP2009-235028 20091009
- Main IPC: C30B15/02
- IPC: C30B15/02
Abstract:
A silica glass crucible for pulling up a silicon single crystal including a wall part and a bottom part is provided with a natural silica glass layer which forms at least one part of a an inner surface of the bottom part, and a synthetic silica glass layer which forms at least an inner surface of the wall part, wherein a concentration of Ca included in the natural silica glass layer is 0.5 ppm or less.
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