Invention Grant
- Patent Title: Method of fabricating metal oxide film on carbon nanotube and method of fabricating carbon nanotube transistor using the same
-
Application No.: US12081454Application Date: 2008-04-16
-
Publication No.: US08507030B2Publication Date: 2013-08-13
- Inventor: Yo-seb Min , Eun-ju Bae , Un-jeong Kim , Eun-hong Lee
- Applicant: Yo-seb Min , Eun-ju Bae , Un-jeong Kim , Eun-hong Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0005381 20080117
- Main IPC: B05D5/12
- IPC: B05D5/12
Abstract:
Provided is a method of forming a metal oxide film on a CNT and a method of fabricating a carbon nanotube transistor using the same. The method includes forming chemical functional group on a surface of the CNT and forming the metal oxide film on the CNT on which the chemical functional group is formed.
Public/Granted literature
Information query
